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S5006 SUM70N04 TK106 NJM2703 13002 R331M TE4100 1N5356B
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  naina s emiconductor 1 d-95, sector 63, noida sales@nainasemi.com thyristor features ? improved glass passivation for high reliability ? exceptional stability at high temperatures ? high di/dt and dv/dt capabilities ? low thermal resistance thermal & mechanical specifications (t parameter operating junction temperature range thermal resistance, junction to case electrical characteristics (t a = 25 0 c unless otherwise parameter maximum average on-state current maximum repetitive peak reverse voltage range forward voltage drop gate current required to trigger gate voltage required to trigger holding current range maximum latching current critical rate of rise of off-state voltage rms isolated voltage maximum ratings (t a = 25 0 c unless otherwise noted) parameter symbol maximum average forward current @ t j = 85 0 c i f(av) maximum average rms forward current i f(rms) maximum non-repetitive surge current @ t = 10ms i maximum i 2 t for fusing @ t = 10ms emiconductor ltd. 1 sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com thyristor C thyristor module improved glass passivation for high reliability (t a = 25 0 c unless otherwise noted) symbol t j - 65 to +1 r th(jc) c unless otherwise noted) symbol i t(max) maximum repetitive peak reverse voltage range v rrm 200 to 1600 v fm i gt v gt i h i l dv/dt v iso c unless otherwise noted) symbol values units f(av) 160 a f(rms) 350 a i fsm 5100 a i 2 t 120 ka 2 s m3 package 1 60ntt 4205450 ? fax: 0120 -4273653 values units 65 to +1 25 o c 0.16 o c/w values units 160 a 200 to 1600 v 1.5 v 150 ma 2.5 v 200 ma 500 ma 1000 v/s 3500 v m3 package
naina s emiconductor 2 d-95, sector 63, noida sales@nainasemi.com diode configuration emiconductor ltd. 1 sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com all dimensions in mm 1 60ntt 4205450 ? fax: 0120 -4273653


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